document number: 88838 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-nov-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 general purpose plastic rectifier by251p thru by255p vishay general semiconductor features ? low forward voltage drop ? low leakage current, i r less than 0.1 a ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes application. note ? these devices are no t aec-q101 qualified. mechanical data case: do-201ad, molded epoxy body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 3.0 a v rrm 200 v to 1300 v i fsm 150 a i r 5.0 a v f 1.1 v t j max. 150 c do-201ad maximum ratings (t a = 25 c unless otherwise noted) parameter symbol by251p by252p by253p by254p by255p unit maximum repetitive pe ak reverse voltage v rrm 200 400 600 800 1300 v maximum rms voltage v rms 140 280 420 560 910 v maximum dc blocking voltage v dc 200 400 600 800 1300 v maximum average forward rectified current 10 mm lead length i f(av) 3.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 150 a maximum full load reverse current, full cycle average 10 mm lead length i r(av) 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol by251p by252p by253p by254p by255p unit maximum instantaneous forward voltage 3.0 a v f 1.1 v maximum reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 v, i rr = 0.25 a t rr 3.0 s typical junction capa citance 4.0 v, 1 mhz c j 40 pf
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88838 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-nov-09 by251p thru by255p vishay general semiconductor note (1) thermal resistance from junction to ambient and from juncti on to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current fig. 3 - maximum non-repetiti ve peak forward surge current fig. 4 - typical instantaneous forward characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol by251p by252p by253p by254p by255p unit typical thermal resistance r ja (1) 20 c/w r jl (1) 10 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode BY253P-E3/54 1.1 54 1400 13" diameter paper tape and reel BY253P-E3/73 1.1 73 1000 ammo pack packaging 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 average forwar d rectified current (a) ambient temperature (c) 60 hz re s i s tive or inductive load 10 mm lead length 1 10 100 1000 100 0 number of cycle s at 60 hz peak forwar d s urge current (a) t a = 55 c 8.3 m s s ingle half s ine-wave 0 20 40 60 80 100 0.01 0.1 1 10 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e leakage current (a) t j = 125 c t j = 25 c t j = 75 c 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 10 100 1 0.1 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 25 c pul s e width = 300 s 1 % duty cycle
document number: 88838 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-nov-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 by251p thru by255p vishay general semiconductor fig. 5 - typical j unction capacitance package outline dimensions in inches (millimeters) 1 10 100 10 100 rever s e voltage (v) junction capacitanc e (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p do-201ad 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2)
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